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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1597 description collector current -i c = 30a high dc current gain- : h fe = 1000(min)@ i c = 15a low collector saturation voltage applications designed for audio frequency power amplifier and low speed high current sw itching industrial use. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 30 a i b b base current-continuous 1.5 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1597 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma ;i b =0 b 120 v v (br)ebo emitter-base breakdown voltage i e = 5ma ;i c =0 7 v v ce( sat ) collector-emitter saturation voltage i c = 30a; i b = 0.1a 2.0 v v be( sat ) base-emitter saturation voltage i c = 30a; i b = 0.1a 2.5 v i ceo collector cutoff current v ce = 60v; i b = 0 b 1.0 ma i cbo collector cutoff current v cb = 120v;i e = 0 10 a i ebo emitter cutoff current v eb = 7v; i c =0 5 ma h fe dc current gain i c = 15a ; v ce = 2v 1000 isc website www.iscsemi.cn 2 |
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